SKU:88753562944
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm
Free Shipping on orders over $50
Shipping Estimate
USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A
Size: 2" Dia x 0
The slot die heads are available in 50mm or 100mm widths with optional thickness shims
Aluminum Oxide Substrates Al2O3
Position adjustment & accuracy X: 20 mm +/- 0
Detailed dimension drawing Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500 °C
It proves inert for carbon and refractory metals in many severe situations
200 kgf/ cm^2
loops times charge/ discharge efficiency curve
Item This furnace module (liner&heating elements inside) is designed for easy replacement of the Two Zone Tube Furnace(Also available for Rotary Two Zone Tube Furnace)
Pocket Size(mil): L300*W300*D30 Pocket Size(mm): L7
fuel cell batteries
Polished: both sides polished
Easy Shipping
Quick Dispatch:
Your Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
Order Tracking:
You'll receive a tracking link by email once your Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm ships.
Need Help?
Questions about Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm, sizing, or delivery? We're just an email away.
Live Shipping Estimates:
Enter your location at checkout to see available shipping methods and costs for Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm in your area.
Get Shipping Estimates
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
You may also like
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm
137.97
★★★★☆4.8 (126)
Fused Silica Glass Substrate (JGS1), 10x10x0.2 mm, 2 sides optical polished
34.44
★★★★★4.9 (98)
Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US
137.43
★★★★★5.0 (157)
GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp
136.85
★★★★★4.7 (84)
Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm
224.22
★★★★★4.9 (203)
Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm
120.17
★★★★★5.0 (176)
GGG, (110), 5x5x0.5mm, 1sp
89.70
★★★★★4.8 (132)