SKU:43701236492

Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm

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Regular price $224.22 USD
Regular price $252.22 USD Sale price $224.22 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

The layers are stacked together via van der Waals interactions

Coulombic efficiency

Composition:     Fe2O3  ceramic

OVERALL TRAY SIZE Size       =  50

Surface roughness:          <30 A ( by AFM)

Non-Flammable

It is an ideal tool for applications where a dry and oil-free vacuum is required

155 MPa Material Stainless Steel 316

52- 56 x103

This wafer container is designed for 2

temperature resolution is ±3

Pressure (kg/cm2)

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